Available Technology
Multi-resistance states through electrically-driven phase transitions in VO2/HfO2/VO2 heterostructures on silicon
Technology:
Fabrication method
Markets Addressed
Method for fabricating from a single type of material, devices that can undergo phase transitions (e.g., transition from an insulator to a metal, or vice versa) at multiple voltages. A typical material would be a functional (“smart”) oxide such as vanadium oxide. Storage devices could be built for example that can store multiple bits by implementing the different voltages. Resistive random access memory, a type of non-volatile RAM, is a major area of interest in the semiconductor industry.
Innovations and Advantages
Key advantages of memory chips fabricated using the Harvard process include faster access time, smaller die size and lower power, all "holy grails" of the memory market. This invention is part of a portfolio of IP, starting with a basic patent for a vanadium oxide, field-induced switch.
Additional Information
Part of VO2 portfolio consisting of HU3267, 3142, 3222, 3305, 3390 and HU4328.
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Inventor(s):
Ramanathan, Shriram
Yang, Zheng
Zhou, You
Categories:
For further information, please contact:
Sam Liss, Director of Business Development
(617) 495-4371
Reference Harvard Case #4328