Available Technology
Liquid precursors for formation of metal oxides
Technology:
Process to deposit high-purity, transparent aluminum oxide films on substrates
Markets Addressed
This process can deposit high-purity, transparent aluminum oxide films on substrates. Corresponding processes may be used to deposit films of the oxides of barium, strontium, calcium, magnesium, titanium, zirconium, tantalum, chromium, iron, cobalt, copper, zinc, lead, bismuth, yttrium, lanthanum, and many other metals.
Innovations and Advantages
Films of metal oxides have been deposited from vaporized precursor mixtures of metal beta-diketonates and, optionally, oxygen or other sources of oxygen. For example, a liquid mixture formed of the mixed aluminum beta-diketonates has derived a mixture of the ligands 2,6-dimethyl-3,5-heptanedione; 2,7-dimethyl-3,5-heptanedione; 2,6-dimethyl-3,5-octanedione; 2,2,6-trimethyl-3,5-heptanedione; 2,8-dimethyl-4,6-nonanedione; 2,7-dimethyl-4,6-nonanedione; 2,2,7-trimethyl-3,5-octanedione; and 2,2,6-trimethyl-3,5-octanedione. This liquid mixture may be nebulized into nitrogen gas preheated to 180 degrees Celsius. The resulting vapor mixture may be mixed with an equal flow rate of preheated dry air, and flowed over substrates heated to around 600 degrees Celsius.
Additional Information
Intellectual Property Status: Issued U.S. patent nos.: 5,980,983; 6,258,157
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Inventor(s):
Gordon, Roy G.
Categories:
For further information, please contact:
Mick Sawka, Director of Business Development
(617) 496-3830
Reference Harvard Case #1380