• Available Technologies
• Technology Development & Accelerator
• Guidelines, Policies & Forms
• Media Center
• About Us
• Contact Us

Press Releases

Cambridge, MA and Marlborough, MA, March 27, 2007 - Harvard University's Office of Technology Development (OTD) and Rohm and Haas Electronic Materials (NYSE:ROH), an innovator of advanced material solutions for the electronics industry, today announced the signing of an agreement licensing to Rohm and Haas a novel class of metal amidinate compounds useful for making thin films of metals and metal compounds by atomic layer deposition. Under the terms of the agreement, Rohm and Haas has exclusive rights to manufacture and market the amidinate compounds to semiconductor manufacturers.

The technology, which is being developed in the lab of Roy Gordon, the Thomas D. Cabot Professor of Chemistry in Harvard's Faculty of Arts and Sciences and a world-renowned scientist at the forefront in developing new metalorganic materials, addresses needs highlighted on the International Technology Roadmap for Semiconductors (ITRS). Atomic Layer Deposition, or ALD, is a technique for making thin films that deposits a single layer at a time with the thickness of only one atom. ALD provides exceptional control of the thickness of the thin film. As features on a chip decrease in size below 45 nm, ALD is predicted to be an essential technology for making such small chips. "Atomic layer deposition represents the future in better manufacturing of semiconductor chips," Gordon said.

Rohm and Haas Electronic Materials will produce these unique compounds at its North Andover, MA, facility. As part of the agreement, the company will collaborate with Harvard scientists to further develop this technology for advanced atomic layer deposition and chemical vapor deposition (CVD) processes.

"We're excited to have the opportunity to collaborate with the Harvard team," said Dr. Dominic Yang, business unit director for Rohm and Haas's Microelectronic Technologies business. "The industry's march toward smaller, more powerful semiconductors must include class-leading ALD and CVD processes and materials. Our work with Professor Gordon and his team strengthens Rohm and Haas's existing precursor solutions and builds upon our broad suite of advanced materials for the semiconductor industry."

"We are extremely pleased that Rohm and Haas shares our confidence in the significant potential of this semiconductor chip manufacturing technology," stated Isaac T. Kohlberg, Chief Technology Development Officer, Harvard University. "This agreement demonstrates the OTD's commitment to partnering with industry leaders such as Rohm and Haas, and to helping bring important, leading-edge technologies to the marketplace. We anticipate that given current trends in R&D, Harvard will become an important engine to help drive innovation."

The amidinates developed by Harvard are ideally suited for advanced high-k dielectric, metal gate and barrier/adhesion layers and will provide manufacturers with improved functionality, throughput and thermal stability for emerging ALD and CVD processes required in 45 nm and below semiconductors, such as memory and logic devices. Several large semiconductor manufacturers have already started to develop material integration schemes using ALD and CVD processes.

About Harvard University's Office of Technology Development
The Harvard Office of Technology Development (OTD) is responsible for all activities pertaining to the evaluation, patenting and licensing of new inventions and discoveries made at Harvard University and Harvard Medical School. OTD also serves to further the development of Harvard technologies through the establishment of sponsored research collaborations with industry. OTD's mission is to promote the public good by fostering innovation and translating new inventions made at Harvard into useful products available and beneficial to society.

About Rohm and Haas Company
Leading the way since 1909, Rohm and Haas is a global pioneer in the creation and development of innovative technologies and solutions for the specialty materials industry. The company's technologies are found in a wide range of markets including: Building and Construction, Electronics, Food and Retail, Household and Personal Care, Industrial Process, Packaging, Paper, Transportation and Water. Our innovative technologies and solutions help to improve life everyday, around the world. Based in Philadelphia, PA, the company generated annual sales of approximately $8.2 billion in 2006. Visit www.rohmhaas.com for more information. imagine the possibilities™

About Rohm and Haas Electronic Materials
Rohm and Haas Electronic Materials develops and delivers innovative material solutions and processes to the electronic and optoelectronic industries. Focused on the circuit board, semiconductor manufacturing and advanced packaging industries, its products and technologies are integral elements in electronic devices around the world.

Through its Microelectronic Technologies business unit, Rohm and Haas Electronic Materials is at the forefront in developing advanced CVD and ALD precursors for the semiconductor industry. The business is also a leading supplier of high-purity III-V metalorganic chemical vapor deposition (MOCVD) precursor materials. The company's precursors are used in all major commercial compound semiconductor applications, including large video displays, lighting, voice/data communication devices, entertainment devices and solar cells. Additional information about Rohm and Haas Electronic Materials can be found at http://electronicmaterials.rohmhaas.com.

This release includes forward-looking statements. Actual results could vary materially, due to changes in current expectations. The forward-looking statements contained in this announcement concerning demand for products and services, sales and earnings growth, and actions that may be taken to improve financial performance, involve risks and uncertainties and are subject to change. Further information about these risks can be found in Rohm and Haas Company's SEC 10-K filing of February 28, 2007.